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 发布时间:2011/10/13 阅读:49528

2.2. Gas activation (atomic hydrogen and carbon species)   2.2气体活化(原子态氢和碳)
In the case of all CVD diamond deposition methods the formation of atomic hydrogen occurs in a selected volume near the deposition area. Due to this fact with increasing distance from the hydrogen source ballas deposition occurs(Fig.3). The geometry of the deposition area depends on the activation method: e.g. in a hot-filament apparatus the region is more linear under the filament and in case of a microwave plasma the area is circular.   就所有CVD金刚石沉积方法而言,原子态氢的形成发生在沉积区域附近一选择区域内。因此,随着与氢源距离的增大,发生半刚石沉积(图3)。沉积区域的形状 取决于活化方法:例如,该区域在热丝仪中比在丝极下更加成线性;对微波等离子体而言,该区域呈圆形。
2.3. Substrate surface temperature and hydrocarbon concentration   2.3基体表面温度和碳氢浓度
Faceted diamonds are usually observed at a substrate surface temperature around 800℃(from 650 to 950℃). It is interesting to note that changes of the diamond morphology towards ballas are observed in the whole substrate surface temperature range. In general it is difficult to determine the exact transition temperature between ballas and faceted growth, due to numerous other parameters within an experimental setup.   当基体表面温度(范围为650~950℃)大约在800℃时,常常能发现多面金刚石。值得提到的是,在整个基体表面温度范围内能看到金刚石到半刚石的形貌 变化。总的来说,由于在一个实验装置内有许多其它参数,要准确测定半刚石和多面金刚石生长的转变温度是不容易的。

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